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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2451B N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit: mm) 1 0.50.1 0.50.1 DESCRIPTION 0.25 +0.1 -0.05 The PA2451B is a switching device, which can be driven directly by a 2.5 V power source. The PA2451B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 6 1.850.1 0.1450.05 (1.45) 0.8 MAX. 2 3 5 4 4.40.1 FEATURES * 2.5 V drive available * Low on-state resistance RDS(on)1 = 20.0 m MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 21.0 m MAX. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 25.0 m MAX. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 32.0 m MAX. (VGS = 2.5 V, ID = 4.0 A) * Built-in G-S protection diode against ESD 5.00.1 7 (0.15) (0.9) ORDERING INFORMATION PART NUMBER PACKAGE (0.5) (2.2) Each lead has same dimensions. 5,6: Source 2 1,2: Source 1 4: Gate 2 3: Gate 1 7: Drain PA2451BTL 6PIN HWSON (4521) ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Note1 Note2 Note1 Note3 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 2 30.0 12.0 8.2 65.0 2.5 0.7 150 -55 to +150 V V A A W W C C Gate1 EQUIVALENT CIRCUIT Drain1 Drain2 Drain Current (pulse) 0.05 +0 -0.05 Total Power Dissipation (2 units) Total Power Dissipation (2 units) Channel Temperature Storage Temperature Body Diode Gate2 Gate Protection Diode Source2 Gate Protection Diode Source1 Notes 1. Mounted on ceramic board of 50 cm x 1.1 mm 2. PW 10 s, Duty Cycle 1% 2 3. Mounted on FR-4 board of 50 cm x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16636EJ1V0DS00 (1st edition) Date Published February 2004 NS CP(K) Printed in Japan 2.00.1 Body Diode 2004 PA2451B ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 TEST CONDITIONS VDS = 30.0 V, VGS = 0 V VGS = 12.0 V, VDS = 0 V VDS = 10.0 V, ID = 1.0 mA VDS = 10.0 V, ID = 4.0 A VGS = 4.5 V, ID = 4.0 A VGS = 4.0 V, ID = 4.0 A VGS = 3.1 V, ID = 4.0 A VGS = 2.5 V, ID = 4.0 A VDS = 10.0 V VGS = 0 V f = 1.0 MHz VDD = 15.0 V, ID = 4.0 A VGS = 4.0 V RG = 6 MIN. TYP. MAX. 1.0 10.0 UNIT A A V S 0.50 3.5 12.0 12.5 14.0 15.5 15.0 15.5 17.5 22.0 540 100 70 20 80 131 89 1.50 Drain to Source On-state Resistance 20.0 21.0 25.0 32.0 m m m m pF pF pF ns ns ns ns nC nC nC V ns nC Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Note Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 24.0 V VGS = 4.0 V ID = 8.2 A IF = 8.2 A, VGS = 0 V IF = 8.2 A, VGS = 0 V di/dt = 100 A/s 9.2 1.7 4.1 0.83 64 36 Note Pulsed: PW 350 s, Duty Cycle 2% TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. RL VGS PG. RG Wave Form D.U.T. VGS 0 10% VGS 90% IG = 2 mA 50 RL VDD VDD PG. 90% VDS 90% 10% 10% VGS 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf 2 Data Sheet G16636EJ1V0DS PA2451B ELECTRICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 120 3 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - W Mounted on ceramic board of 50 cm2 x 1.1 mm, 2 units Mounted on FR-4 board of 50 cm2 x 1.1 mm, 2 units 100 80 60 40 20 0 0 25 50 75 100 125 150 175 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA 1000 100 10 ID(DC) RDS(on) Limited (at VGS = 4.5 V) ID(pulse) PW = 10 s TA - Ambient Temperature - C ID - Drain Current - A 100 s 1 0.1 0.01 DC (2 units) Single pulse Mounted on ceramic board of 50 cm2 x 1.1 mm PD (FET1) : PD (FET2) = 1:1 1 ms 10 ms 30 ms 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - C/W 1000 Mounted on FR-4 board of 50 cm2 x 1.1 mm 100 10 Mounted on ceramic board of 50 cm2 x 1.1 mm 1 Single pulse PD (FET1) : PD (FET2) = 1:1 0.1 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 Data Sheet G16636EJ1V0DS 3 PA2451B DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 1.2 Pulsed FORWARD TRANSFER CHARACTERISTICS 100 10 1 0.1 0.01 0.001 0.5 1 1.5 2 2.5 VDS = 10.0 V Pulsed TA = 125C 75C 25C -25C ID - Drain Current - A ID - Drain Current - A VGS = 4.5 V 4.0 V 3.1 V 2.5 V VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S 1.4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 VDS = 10.0 V Pulsed TA = -25C 25C 75C 125C VGS(off) - Gate Cut-off Voltage - V 1.2 1 0.8 0.6 0.4 -50 0 50 VDS = 10.0 V ID = 1.0 mA 1 0.1 100 150 0.01 0.01 0.1 1 10 Tch - Channel Temperature - C ID - Drain Current - A 40 RDS(on) - Drain to Source On-state Resistance - m RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 ID = 4.0 A Pulsed 30 Pulsed VGS = 2.5 V 3.1 V 4.0 V 4.5 V 30 20 20 10 10 0 0.1 1 10 100 ID - Drain Current - A 0 0 2 4 6 8 10 12 VGS - Gate to Source Voltage - V 4 Data Sheet G16636EJ1V0DS PA2451B DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - m 40 VGS = 2.5 V 3.1 V 4.0 V 4.5 V 30 Ciss, Coss, Crss - Capacitance - pF ID = 4.0 A Pulsed 10000 VGS = 0 V f = 1.0 MHz 1000 Ciss 20 100 10 Coss Crss 0 -50 10 0 50 100 150 0.1 1 10 100 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS 4 ID = 8.2 A 3 VDD = 6.0 V 15.0 V 24.0 V 1000 td(on), tr, td(off), tf - Switching Time - ns td(off) 100 tf tr VGS - Gate to Drain Voltage - V VDD = 15.0 V VGS = 4.0 V RG = 6 2 1 td(on) 10 0.1 1 ID - Drain Current - A 0 10 0 2 4 6 8 10 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 VGS = 0 V Pulsed 10 IF - Diode Forward Current - A 1 0.1 0.01 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V Data Sheet G16636EJ1V0DS 5 PA2451B When you use this device, in order to prevent a customer's hazard and damage, use it with understanding the following contents. If used exceeding recommended conditions, there is a possibility of causing failure of the device and characteristic degradation. 1. When you mount the device on a substrate, carry out within our recommended soldering conditions of infrared reflow. If mounted exceeding the conditions, the characteristic of a device may be degraded and it may result in failure. 2. When you wash the device mounted the substrate, carry out within our recommended conditions. If washed exceeding the conditions, the characteristic of a device may be degraded and it may result in failure. 3. When you use ultrasonic wave to substrate after the device mounting, prevent from touching a resonance generator directly. If it touches, the characteristic of a device may be degraded and it may result in failure. 4. Please refer to Figure 1 as an example of the land pattern. Optimize the land pattern in consideration of density, appearance of solder fillets, common difference, etc in an actual design. Figure 1. Example of the land pattern 3.86 Unit: mm 2.04 1.16 0.50 0.30 0.83 6 Data Sheet G16636EJ1V0DS PA2451B 5. This device is very thin device and should be handled with caution for mechanical stress. The rate of distortion applied to the device should become below 2000 . Note1 If the rate of distortion exceeds 2000 , the characteristic of a device may be degraded and it may result in failure. Figure 2. Direction of substrate and stress The substrate that mounted the device is on a stand with a support width of 24 mm. The device is turned downward. The stress is applied from a top. Substrate: 33 x 6 mm, t = 0.5 mm, FR-4 Stress The direction of a device: Bend Support width 24 mm Measurement position Device Figure 3. Example of the bend and the rate of distortion Note2 6000 The rate of distortion - 5000 4000 3000 2000 1000 0 0 0.2 0.4 0.6 0.8 1 Recommended condition Bend - mm Note 1. Definition of rate of distortion (written as in this document) = (l - l0)/l0 l0: Distance for two arbitrary points before receiving stress. l: Distance above-mentioned when receiving stress. 2. The relation of the distortion and the bend changes with several conditions, such as a size of substrate and so on. Data Sheet G16636EJ1V0DS 7 PA2451B * The information in this document is current as of February, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
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